Visible to the public Detection, diagnosis, and repair of faults in memristor-based memories

TitleDetection, diagnosis, and repair of faults in memristor-based memories
Publication TypeConference Paper
Year of Publication2014
AuthorsKannan, S., Karimi, N., Karri, R., Sinanoglu, O.
Conference NameVLSI Test Symposium (VTS), 2014 IEEE 32nd
Date PublishedApril
KeywordsCircuit faults, crossbar memories, fault detection, fault diagnosis, faulty cell repairs, future memory architectures, high defect densities, hybrid diagnosis scheme, integrated circuits, maintenance engineering, March testing, Memory, Memristor, memristor failures, memristor-based memories, memristors, multiple memory cells testing, nanoscale fabrication, post-silicon recovery, random-access storage, Resistance, sneak-path free crossbar, Sneak-paths, test time, Testing

Memristors are an attractive option for use in future memory architectures due to their non-volatility, high density and low power operation. Notwithstanding these advantages, memristors and memristor-based memories are prone to high defect densities due to the non-deterministic nature of nanoscale fabrication. The typical approach to fault detection and diagnosis in memories entails testing one memory cell at a time. This is time consuming and does not scale for the dense, memristor-based memories. In this paper, we integrate solutions for detecting and locating faults in memristors, and ensure post-silicon recovery from memristor failures. We propose a hybrid diagnosis scheme that exploits sneak-paths inherent in crossbar memories, and uses March testing to test and diagnose multiple memory cells simultaneously, thereby reducing test time. We also provide a repair mechanism that prevents faults in the memory from being activated. The proposed schemes enable and leverage sneak paths during fault detection and diagnosis modes, while still maintaining a sneak-path free crossbar during normal operation. The proposed hybrid scheme reduces fault detection and diagnosis time by ~44%, compared to traditional March tests, and repairs the faulty cell with minimal overhead.

Citation Key6818762