Visible to the public Biblio

Filters: Keyword is indium compounds  [Clear All Filters]
Huang, Hsiang-Hung, Toprasertpong, Kasidit, Delamarre, Amaury, Watanabe, Kentaroh, Sugiyama, Masakazu, Nakano, Yoshiaki.  2019.  Numerical Demonstration of Trade-off between Carrier Confinement Effect and Carrier Transport for Multiple-Quantum-Well Based High-Efficiency InGaP Solar Cells. 2019 Compound Semiconductor Week (CSW). :1-2.

To promote InGaP solar cell efficiency toward the theoretical limit, one promising approach is to incorporate multiple quantum wells (MQWs) into the InGaP host and improve its open-circuit voltage by facilitating radiative carrier recombination owing to carrier confinement. In this research, we demonstrate numerically that a strain-balanced (SB) In1-xGaxP/In1-yGayP MQW enhances confined carrier density while degrades the effective carrier mobility. However, a smart design of the MQW structure is possible by considering quantitatively the trade-off between carrier confinement effect and carrier transport, and MQW can be advantageous over the InGaP bulk material for boosting photovoltaic efficiency.

Avrutin, E. A., Ryvkin, B. S., Kostamovaara, J. T..  2017.  Increasing output power of pulsed-eye safe wavelength range laser diodes by strong doping of the n-optical confinement layer. 2017 IEEE High Power Diode Lasers and Systems Conference (HPD). :17–18.

A semi-analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption. The resulting losses are shown to be substantially lower than those in a similar, but weakly doped structure. Thus a significant improvement in the output power and efficiency by strong n-doping is predicted.

Keeler, G. A., Campione, S., Wood, M. G., Serkland, D. K., Parameswaran, S., Ihlefeld, J., Luk, T. S., Wendt, J. R., Geib, K. M..  2017.  Reducing optical confinement losses for fast, efficient nanophotonic modulators. 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM). :201–202.

We demonstrate high-speed operation of ultracompact electroabsorption modulators based on epsilon-near-zero confinement in indium oxide (In$_\textrm2$$_\textrm3$\$) on silicon using field-effect carrier density tuning. Additionally, we discuss strategies to enhance modulator performance and reduce confinement-related losses by introducing high-mobility conducting oxides such as cadmium oxide (CdO).