Visible to the public Application Specific Integrated Gate-Drive Circuit for Driving Self-Oscillating Gallium Nitride Logic-Level Power Transistors

TitleApplication Specific Integrated Gate-Drive Circuit for Driving Self-Oscillating Gallium Nitride Logic-Level Power Transistors
Publication TypeConference Paper
Year of Publication2018
AuthorsOvergaard, Jacob E. F., Hertel, Jens Christian, Pejtersen, Jens, Knott, Arnold
Conference Name2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
KeywordsAnalog integrated circuit, application specific integrated circuits, application specific integrated gate-drive circuit, ASIC, capacitance 56.7 pF, class-E resonant inverter, CMOS gate-drivers, CMOS integrated circuits, composability, driver circuits, electrostatic discharge, electrostatic discharge diode, Electrostatic discharges, ESD diode, fabricated gate-driver, gallium compounds, gan, gate drive technologies, gate-driver, gate-driver functional behaviour, high-speed floating level-shifter, high-voltage transistors, III-V semiconductors, integrated circuit design, integrated complementary metal-oxide-semiconductor gate-drivers, Logic gates, logic-level power transistors, low-power electronics, Metrics, MOSFET, oscillating behaviors, package bondwire connections, parallel LC resonant tank, parasitic capacitance, PCB, power density, Power transistors, printed circuit design, privacy, prototype printed circuit board design, pubcrawl, reset circuitry, resilience, Resiliency, Resistance, Self-oscillating, self-oscillating gallium nitride, self-oscillating gate-drive, switch-mode power supplies, switched mode power supplies, Switching circuits, wide band gap semiconductors, wide bandgap power semiconductors
AbstractWide bandgap power semiconductors are key enablers for increasing the power density of switch-mode power supplies. However, they require new gate drive technologies. This paper examines and characterizes a fabricated gate-driver in a class-E resonant inverter. The gate-driver's total area of 1.2mm2 includes two high-voltage transistors for gate-driving, integrated complementary metal-oxide-semiconductor (CMOS) gate-drivers, high-speed floating level-shifter and reset circuitry. A prototype printed circuit board (PCB) was designed to assess the implications of an electrostatic discharge (ESD) diode, its parasitic capacitance and package bondwire connections. The parasitic capacitance was estimated using its discharge time from an initial voltage and the capacitance is 56.7 pF. Both bondwires and the diode's parasitic capacitance is neglegible. The gate-driver's functional behaviour is validated using a parallel LC resonant tank resembling a self-oscillating gate-drive. Measurements and simulations show the ESD diode clamps the output voltage to a minimum of -2V.
Citation Keyovergaard_application_2018