Visible to the public Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory

TitleProton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory
Publication TypeJournal Article
Year of Publication2018
AuthorsWang, Y., Huang, F., Hu, Y., Cao, R., Shi, T., Liu, Q., Bi, L., Liu, M.
JournalIEEE Electron Device Letters
KeywordsCapacitors, compositionality, cyber physical systems, dielectric hysteresis, dielectric polarisation, Electric fields, electrical characterization, electrical resistivity, Fatigue, ferroelectric capacitors, ferroelectric hysteresis loop, ferroelectric memory, ferroelectric memory performance, ferroelectric storage, ferroelectric thin films, Hafnium compounds, HfO₂, HfO2:Y, HYO-based ferroelectric memory, hysteresis, Internet of Things, Magnetic Remanence, Permittivity, proton, proton effects, proton fluence, proton radiation effects, Protons, pubcrawl, radiation, remanence, remanent polarization, Resiliency, TiN/Y-doped-HfO2/TiN capacitors, X-ray diffraction, X-ray diffraction patterns, Y-doped HfO2-based ferroelectric memory, Yttrium
AbstractIn this letter, ferroelectric memory performance of TiN/Y-doped-HfO2 (HYO)/TiN capacitors is investigated under proton radiation with 3-MeV energy and different fluence (5e13, 1e14, 5e14, and 1e15 ions/cm2). X-ray diffraction patterns confirm that the orthorhombic phase Pbc21 of HYOfilm has no obvious change after proton radiation. Electrical characterization results demonstrate slight variations of the permittivity and ferroelectric hysteresis loop after proton radiation. The remanent polarization (2Pr) of the capacitor decreases with increasing proton fluence. But the decreasing trend of 2Pr is suppressed under high electric fields. Furthermore, the 2Pr degradation with cycling is abated by proton radiation. These results show that the HYO-based ferroelectric memory is highly resistive to proton radiation, which is potentially useful for space applications.
Citation Keywang_proton_2018