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Cyber-Physical Systems Virtual Organization
Fostering collaboration among CPS professionals in academia, government, and industry
CPS-VO
MOSFET
biblio
Application Specific Integrated Gate-Drive Circuit for Driving Self-Oscillating Gallium Nitride Logic-Level Power Transistors
Submitted by grigby1 on Fri, 04/24/2020 - 3:08pm
Logic gates
pubcrawl
resilience
Resiliency
privacy
composability
integrated circuit design
Metrics
Resistance
CMOS integrated circuits
Analog integrated circuit
application specific integrated circuits
application specific integrated gate-drive circuit
ASIC
capacitance 56.7 pF
class-E resonant inverter
CMOS gate-drivers
driver circuits
electrostatic discharge
electrostatic discharge diode
Electrostatic discharges
ESD diode
fabricated gate-driver
gallium compounds
gan
gate drive technologies
gate-driver
gate-driver functional behaviour
high-speed floating level-shifter
high-voltage transistors
III-V semiconductors
integrated complementary metal-oxide-semiconductor gate-drivers
logic-level power transistors
low-power electronics
MOSFET
package bondwire connections
parallel LC resonant tank
parasitic capacitance
PCB
power density
Power transistors
printed circuit design
prototype printed circuit board design
reset circuitry
Self-oscillating
self-oscillating gallium nitride
self-oscillating gate-drive
switch-mode power supplies
switched mode power supplies
Switching circuits
wide band gap semiconductors
wide bandgap power semiconductors
oscillating behaviors
biblio
Quantum Confinement Effects and Electrostatics of Planar Nano-Scale Symmetric Double-Gate SOI MOSFETs
Submitted by grigby1 on Tue, 12/17/2019 - 11:31am
1D Poisson equation
an-harmonic oscillator potential
channel charge density
charge carriers
charge distribution
composability
confinement
cyber-physical system
cyber-physical systems
electron density
electrostatics
inherent structural symmetry
MOSFET
nanoelectronics
nanoscale symmetric DGSOI MOSFET
planar nanoscale symmetric double-gate SOI MOSFET
Poisson equation
privacy
pubcrawl
quantum confinement effects
resilience
Resiliency
semiconductor device models
Si
silicon-on-insulator
size 10.0 nm
SOI film thickness
wave-function
biblio
Impedance phlebography based pulse sensing using inductively-coupled inkjet-printed WRAP sensor
Submitted by el_wehby on Mon, 06/04/2018 - 4:32pm
bioelectric potentials
Biomedical monitoring
body sensor networks
frequency 13.56 MHz
health care
Impedance
impedance phlebography based pulse sensing
inductively-coupled inkjet- printed WRAP sensor
ink jet printing
mobile health
MOSFET
MOSFET transducer
Oscilloscopes
patient health monitoring
patient monitoring
planar spiral coil
Silver
tuning capacitor
Wireless communication
wireless resistive analog passive sensors
wireless sensor networks
1637250
