Skip to Main Content Area
CPS-VO
Contact Support
Browse
Calendar
Announcements
Repositories
Groups
Search
Search for Content
Search for a Group
Search for People
Search for a Project
Tagcloud
› Go to login screen
Not a member?
Click here to register!
Forgot username or password?
Cyber-Physical Systems Virtual Organization
Fostering collaboration among CPS professionals in academia, government, and industry
CPS-VO
semiconductor device models
biblio
Quantum Confinement Effects and Electrostatics of Planar Nano-Scale Symmetric Double-Gate SOI MOSFETs
Submitted by grigby1 on Tue, 12/17/2019 - 12:31pm
1D Poisson equation
an-harmonic oscillator potential
channel charge density
charge carriers
charge distribution
composability
confinement
cyber-physical system
cyber-physical systems
electron density
electrostatics
inherent structural symmetry
MOSFET
nanoelectronics
nanoscale symmetric DGSOI MOSFET
planar nanoscale symmetric double-gate SOI MOSFET
Poisson equation
privacy
pubcrawl
quantum confinement effects
resilience
Resiliency
semiconductor device models
Si
silicon-on-insulator
size 10.0 nm
SOI film thickness
wave-function
biblio
Phonon confinement effects in diffusive quantum transport simulations with the effective mass approximation and k·p method
Submitted by grigby1 on Thu, 08/23/2018 - 11:59am
advanced modeling tools
Charge carrier processes
composability
confinement
cyber-physical systems
diffusive quantum transport simulations
dissipative quantum transport calculations
effective mass
effective mass approximation
Electric potential
electron-phonon coupling
elemental semiconductors
k·p method
Logic gates
n-type silicon nanowire transistors
nanowires
p-type silicon nanowire transistors
phonon confinement effects
phonons
privacy
pubcrawl
resilience
Resiliency
semiconductor device models
Silicon
Strain
Transistors
