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Cyber-Physical Systems Virtual Organization
Fostering collaboration among CPS professionals in academia, government, and industry
CPS-VO
III-V semiconductors
biblio
A Review of the Approaches to Improve The Effective Coupling Coefficient of AlN based RF MEMS Resonators
Submitted by aekwall on Mon, 12/21/2020 - 12:33pm
Scalability
Resiliency
Human behavior
pubcrawl
Micromechanical devices
acoustic resonators
AlN
aluminium compounds
bulk acoustic wave devices
III-V semiconductors
wide band gap semiconductors
Aluminum Nitride
Couplings
crystal resonators
Resonators
acoustic coupling
micromechanical resonators
2D lateral wave
communication applications
effective coupling coefficient
III-V semiconductor materials
Lateral wave
nonbulk acoustic wave aluminum nitride
Optical filters
piezoelectric MEMS resonators
radiofrequency filters
resonator
Resonator filters
RF MEMS
RF MEMS resonators
two-dimensional lateral wave
vertical wave
biblio
Application Specific Integrated Gate-Drive Circuit for Driving Self-Oscillating Gallium Nitride Logic-Level Power Transistors
Submitted by grigby1 on Fri, 04/24/2020 - 3:08pm
Logic gates
pubcrawl
resilience
Resiliency
privacy
composability
integrated circuit design
Metrics
Resistance
CMOS integrated circuits
Analog integrated circuit
application specific integrated circuits
application specific integrated gate-drive circuit
ASIC
capacitance 56.7 pF
class-E resonant inverter
CMOS gate-drivers
driver circuits
electrostatic discharge
electrostatic discharge diode
Electrostatic discharges
ESD diode
fabricated gate-driver
gallium compounds
gan
gate drive technologies
gate-driver
gate-driver functional behaviour
high-speed floating level-shifter
high-voltage transistors
III-V semiconductors
integrated complementary metal-oxide-semiconductor gate-drivers
logic-level power transistors
low-power electronics
MOSFET
package bondwire connections
parallel LC resonant tank
parasitic capacitance
PCB
power density
Power transistors
printed circuit design
prototype printed circuit board design
reset circuitry
Self-oscillating
self-oscillating gallium nitride
self-oscillating gate-drive
switch-mode power supplies
switched mode power supplies
Switching circuits
wide band gap semiconductors
wide bandgap power semiconductors
oscillating behaviors
biblio
Single Crystalline Scandium Aluminum Nitride: An Emerging Material for 5G Acoustic Filters
Submitted by aekwall on Mon, 01/13/2020 - 11:07am
Scalability
Resiliency
Human behavior
pubcrawl
5G mobile communication
piezoelectric materials
5G acoustic filters
5G resonators
acoustic filters
acoustic resonators
AlN
aluminium compounds
Aluminum Nitride
bulk acoustic wave devices
bulk acoustic wave resonators
electromechanical coupling
emerging material
Film bulk acoustic resonators
film thickness
filter bandwidth
filtering applications
form factor
frequency 3.0 GHz to 10.0 GHz
high crystal quality
high electromechanical coupling
high-performance filters
high-quality single-crystalline
III-V semiconductors
material candidate
next generation wireless communication devices
operation frequencies
Piezoelectric devices
piezoelectric material needs
Q-factor
quality factors
RF front-end
SC
scandium
scandium compounds
Scandium Doping
semiconductor growth
Si
Single Crystalline
single-crystal
size 400.0 nm
sputter deposition
sputtering techniques
steep skirts
sub-micron ranges
surface acoustic wave devices
thin films
ultra-thin films
wide band gap semiconductors
acoustic coupling
biblio
Numerical Demonstration of Trade-off between Carrier Confinement Effect and Carrier Transport for Multiple-Quantum-Well Based High-Efficiency InGaP Solar Cells
Submitted by grigby1 on Tue, 12/17/2019 - 11:31am
bulk material
carrier confinement effect
carrier density
carrier mobility
carrier transport
composability
confinement
cyber-physical system
cyber-physical systems
effective carrier mobility
electron-hole recombination
gallium compounds
high-efficiency solar cells
III-V semiconductors
In1-xGaxP-In1-yGayP
indium compounds
InGaP
MQW structure
multiple quantum wells
multiple-quantum-well
numerical analysis
numerical demonstration
open-circuit voltage
photovoltaic efficiency
photovoltaics
privacy
pubcrawl
radiative carrier recombination
resilience
Resiliency
semiconductor quantum wells
smart design
solar cells
wide band gap semiconductors
biblio
Increasing output power of pulsed-eye safe wavelength range laser diodes by strong doping of the n-optical confinement layer
Submitted by grigby1 on Thu, 08/23/2018 - 10:59am
absorption
composability
confinement
current flow
cyber-physical systems
Diode lasers
Doping
efficiency
eye safe spectral range
Free electron lasers
gallium arsenide
High power lasers
III-V semiconductors
indium compounds
InGaAsP
internal optical losses
intervalence band absorption
laser efficiency
laser theory
n-optical confinement layer
optical fabrication
optical losses
optical pumping
output power
privacy
pubcrawl
pulsed-eye safe wavelength range laser diodes
resilience
Resiliency
semianalytical model
semiconductor lasers
size 1.5 mum
strong doping
two-photon absorption
two-photon processes
