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Cyber-Physical Systems Virtual Organization
Fostering collaboration among CPS professionals in academia, government, and industry
CPS-VO
ferroelectric capacitors
biblio
Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory
Submitted by aekwall on Mon, 11/30/2020 - 11:07am
Internet of Things
Resiliency
pubcrawl
cyber physical systems
Capacitors
Compositionality
remanence
X-ray diffraction
dielectric hysteresis
dielectric polarisation
Electric fields
electrical characterization
electrical resistivity
Fatigue
ferroelectric capacitors
ferroelectric hysteresis loop
ferroelectric memory
ferroelectric memory performance
ferroelectric storage
ferroelectric thin films
Hafnium compounds
HfO₂
HfO2:Y
HYO-based ferroelectric memory
hysteresis
Permittivity
proton
proton effects
proton fluence
proton radiation effects
Protons
radiation
remanent polarization
TiN/Y-doped-HfO2/TiN capacitors
X-ray diffraction patterns
Y-doped HfO2-based ferroelectric memory
Yttrium
Magnetic Remanence
